Persons
prof. Ing. Pavel Hazdra, CSc.
Dissertation topics
Design of silicon carbide power devices
- Branch of study: Electrical Engineering and Communications
- Department: Department of Microelectronics
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Description:
Design, simulation and characterization of silicon carbide power devices (JBS diodes, PiN diodes, MOSFETs) for voltage classes higher than 3.3 kV. http://www.micro.feld.cvut.cz/
Optical and Electrical Properties of Nanometric Structures
- Branch of study: Electrical Engineering and Communications
- Department: Department of Microelectronics
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Description:
Characterization and simulation of electrical properties of nanometric structures. http://www.micro.feld.cvut.cz/
Radiation Defects and Their Applications in Semiconductor Devices
- Branch of study: Electrical Engineering and Communications
- Department: Department of Microelectronics
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Description:
Application of radiation defects for improvement of semiconductor device parameters (technology development, characterization a simulation). http://www.micro.feld.cvut.cz/
Radiation Hardeness of Wide-Bandgap (SiC, GaN) Semiconductor Devices
- Branch of study: Electrical Engineering and Communications
- Department: Department of Microelectronics
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Description:
Investigation of radiation hardeness of wide-bandgap (SiC, GaN) semiconductor devices (SiC, GaN) and systems. http://www.micro.feld.cvut.cz/
Wide-Bandgap Semiconductor Materials and Structures
- Branch of study: Electrical Engineering and Communications
- Department: Department of Microelectronics
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Description:
Characterization of wide-bandgap semiconductor materials (SiC, GaN) and structures (electrical and optical parameters, defects, etc.). http://www.micro.feld.cvut.cz/
