Lidé

Rupendra Kumar Sharma, Ph.D.

Všechny publikace

New metric for carrier selective contacts for silicon heterojunction solar cells

  • DOI: 10.1016/j.solener.2022.08.047
  • Odkaz: https://doi.org/10.1016/j.solener.2022.08.047
  • Pracoviště: Katedra elektrotechnologie
  • Anotace:
    Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest reported voltage among crystalline silicon technologies. The electrode work-function, doping and thickness of the doped layer remain the key parameters for governing the cell performance. Recently, we have studied the requirements for carrier selective contacts under various illumination levels and reported logarithmic dependence of these parameters. In this work, we define a new metric for describing the ability of a contact to collect the carriers and named it as contact strength. We have developed an analytical approach for contact strength of hole selective contacts which represents the requirements on doping, thickness of the contact layer, and electrode work-function for a given illumination. First, the numerical model is calibrated with the experimental data for a wide range of illumination (0.01 Sun – 1.0 Sun) and then simulations have been fitted with analytical model. For the selective contact layer, we observe that only the total charge, rather than thickness and doping individually, matters. The work-function of the top electrode also contributes strongly to contact strength and can in principle substitute doped layer. This insightful metric will guide the solar cell technologists to better understand the carrier selective contacts and to maximize the cell performance not only at standard test conditions (STC), but also at low light illuminations.

Pulsed laser deposition of high-transparency molybdenum oxide thin films

  • DOI: 10.1016/j.vacuum.2021.110613
  • Odkaz: https://doi.org/10.1016/j.vacuum.2021.110613
  • Pracoviště: Katedra elektrotechnologie
  • Anotace:
    Molybdenum oxide is an intensively studied material, thanks to its high bandgap, high work function, and potentially also photochromism, plasmonic properties, and layered structure. In this contribution, we employ Pulsed Laser Deposition (PLD) from stoichiometric MoO3 and metal Mo target at temperature range of 25 °C – 500 °C and oxygen pressure variation of 0.1 mbar – 0.4 mbar to deposit high transparency MoO3 layers. The combination of Photothermal Manuscript File Click here to view linked ReferencesDeflection Spectroscopy (PDS) and Spectral Ellipsometry is applied to accurately track all the optical properties. The X-ray diffraction and Scanning Electron Microscopy (SEM) are used to monitor crystallinity and surface morphology.

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part I: Drain Current and Transconductances

  • Autoři: Makris, N., Jazaeri, F., Sallese, J.M., Rupendra Kumar Sharma, Ph.D., Bucher, M.
  • Publikace: IEEE Transactions on Electron Devices. 2018, 65(7), 2744-2750. ISSN 0018-9383.
  • Rok: 2018
  • DOI: 10.1109/TED.2018.2838101
  • Odkaz: https://doi.org/10.1109/TED.2018.2838101
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, drain current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.

Optimization of 1700V of 4H-SiC JBS Diode Parameters

  • Autoři: Rupendra Kumar Sharma, Ph.D., prof. Ing. Pavel Hazdra, CSc., Popelka, S., Mihaila, A., Bartolf, H.
  • Publikace: Silicon Carbide and Related Materials 2015. Pfaffikon: Trans Tech Publications Ltd., 2016. p. 782-785. Materials Science Forum. ISSN 0255-5476. ISBN 978-3-0357-1042-7.
  • Rok: 2016

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

  • DOI: 10.1109/TED.2015.2421503
  • Odkaz: https://doi.org/10.1109/TED.2015.2421503
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.

Investigation of Deep Levels in SiC-Schottky Diodes with Frequency Resolved Admittance Spectroscopy

  • Autoři: Pertermann, E., Lutz, J., Rupendra Kumar Sharma, Ph.D., prof. Ing. Pavel Hazdra, CSc., Popelka, S., Felsl, H.P., Niedernostheide, H.J., Schulze, H.J.
  • Publikace: 17th European Conference on Power Electronics and Applications. Brussels: EPE Association, 2015. ISBN 9789075815238.
  • Rok: 2015
  • DOI: 10.1109/EPE.2015.7311785
  • Odkaz: https://doi.org/10.1109/EPE.2015.7311785
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy (FRAS). The results obtained by FRAS are compared with deep level transient spectroscopy measurement.

Simulation and Characterization of 4H-SiC JBS Diodes Irradiated by Hydrogen and Carbon Ions

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with simulation and characterization of 4H-SiC JBS diodes irradiated by hydrogen and carbon Ions.

Simulation and Characterization of Ion Irradiated 4H-SiC JBS Diode

The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics

The Effectof Light Ion Irradiation on 4H-SiC MPS Power Diode Characteristics: Experiment and Simulation

  • DOI: 10.1109/TNS.2015.2395712
  • Odkaz: https://doi.org/10.1109/TNS.2015.2395712
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    In this article, the effect of local radiation damage on the electrical characteristics of 1700 V 4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects introduced by irradiation with 670 keV protons were placed into the low–doped n-type epi–layer and their influence on diode characteristics were characterized by capacitance DLTS, C-V profiling and I-V measurements. Simulation model laccounting for the effect of proton irradiation was developed, calibrated and used for analysis of underlying effects and temperature dependencies.

Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

The effect of fast ion irradiation on 1700V 4H-SiC MPS diode: Experimental and Simulation

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with experimental and simulation studies of 1700V 4H-SiC MPS diodes irradiated with fast light ions.

Za stránku zodpovídá: Ing. Mgr. Radovan Suk