Lidé

prof. Ing. Pavel Hazdra, CSc.

Všechny publikace

Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth

  • Autoři: Mortet, V., Taylor, A., Davydova, M., Jiránek, J., Fekete, L., Klimša, L., Šimek, D., Lambert, N., Sedláková, S., Kopeček, J., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Diamond and Related Materials. 2022, 122 ISSN 0925-9635.
  • Rok: 2022
  • DOI: 10.1016/j.diamond.2022.108887
  • Odkaz: https://doi.org/10.1016/j.diamond.2022.108887
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is observed.

Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

  • DOI: 10.1016/j.diamond.2021.108797
  • Odkaz: https://doi.org/10.1016/j.diamond.2021.108797
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). Morphology and thickness of deposited layers were determined by AFM and X-SEM; resistivity, carrier concentration and mobility were determined by Hall measurement. Specific contact resistance RCsp of evaporated Ti/Au, Zr/Au, and Mo/Au contacts was measured using c-TLM structures after different annealing stages at temperatures up to 850 °C. Results show that on layers with {113} orientation it is possible to achieve ohmic contacts of comparable quality as for layers with {100} orientation. For all three metal systems, the lowest values for specific contact resistance reached 1 × 10−6 Ω.cm2. Ti/Au contacts show a stable ohmic behavior over the whole range of annealing temperatures, while Mo/Ti contacts had to be annealed above 500 °C to reduce the Schottky barrier and achieve good ohmic contact on lower B doped layers. Zr/Au contacts exhibit the lowest adhesion and required annealing to at least 700 °C to achieve ideal electrical and mechanical properties. Mo/Au and Zr/Au contacts on highly boron doped layers (~1021 cm−3) show excellent contacts when annealed at 700 °C, and therefore can be considered as improved candidates for ohmic contacts for diamond-based high-temperature power electronics than the conventional Ti/Au (Ti/Pt/Au) contact system. In summary, this study confirms the suitability of {113} oriented boron doped diamond epitaxial layers for the fabrication of diamond power electronic devices with excellent ohmic contacts.

Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

  • DOI: 10.1016/j.diamond.2022.109088
  • Odkaz: https://doi.org/10.1016/j.diamond.2022.109088
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. Results confirm that the use of {113} oriented homoepitaxial boron-doped diamond for the fabrication of high-temperature power devices is advantageous, as it enables high-quality Schottky and ohmic contacts.

Characterization of the Very Low Contact Resistance on Heavily Boron Doped (113) CVD Diamond

  • DOI: 10.37904/nanocon.2021.4320
  • Odkaz: https://doi.org/10.37904/nanocon.2021.4320
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The low resistance of ohmic contacts on diamond layers is important for the fabrication of diamond power electronic devices with fast switching capabilities for future high voltage applications. The low barrier height between the metal and diamond, high level of boron doping and annealing at elevated temperatures are the most critical parameters to reach the lowest contact resistivity. In this work, we report on titanium/gold ohmic contacts prepared on the heavily boron-doped (113) epitaxial diamond layers. The contact resistance has been characterized by the Circular Transmission Line Model (cTLM) structures. We used the analytical model of field enhanced emission, tunneling and the image force influence including Fermi level position dependence on the boron concentration for theoretical Ti/Au contact analysis and the Silvaco TCAD 2D simulation to estimate the measurement error associated with the nonzero metal resistance. We show that the resulting simulation values are consistent with the experimental results.

Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers

  • DOI: 10.37904/nanocon.2020.3683
  • Odkaz: https://doi.org/10.37904/nanocon.2020.3683
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Epitaxial growth of diamond is critically important for the fabrication of diamond-based electronic devices. The emerging study of the epitaxial diamond growth on the (113) vicinal surfaces evidences highly needed high growth rates and low structural defects concentrations with both p- and n-type doping. In this work, we compare the morphology and dopant concentration incorporation of heavily boron-doped (113) epitaxial diamond layers with conventionally studied (100) and (111) epitaxial layers. Epitaxial layers were grown using resonance cavity Microwave Plasma Enhanced Chemical Vapor Deposition (MWPECVD) system. The surface morphology of epitaxial layers was studied by optical microscopy and atomic force microscopy, whereas the boron incorporation homogeneity was determined by Raman spectroscopy mapping. Heavily boron-doped (113) epitaxial diamond layers can be grown at a high growth rate with a smooth surface, without pyramidal hillocks or non-epitaxial crystallite defects, and with homogeneous boron concentration. These results confirm that epitaxial diamond growth on (113) vicinal surfaces is a promising solution for the development and fabrication of diamond-based electronic devices. (9) (PDF) Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers. Available from: https://www.researchgate.net/publication/349892789_Effect_of_the_substrate_crystalline_orientation_on_the_surface_morphology_and_boron_incorporation_into_epitaxial_diamond_layers [accessed Aug 25 2021].

Properties of boron-doped (113) oriented homoepitaxial diamond layers

  • DOI: 10.1016/j.diamond.2020.108223
  • Odkaz: https://doi.org/10.1016/j.diamond.2020.108223
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works indicate that boron-doped and phosphorous-doped diamond can be grown on atomically stepped (113) surfaces (A. Tallaire et al., 2016; M.-A. Pinault-Thaury et al., 2019), however the electrical properties of these layers have not been studied in detail. In this work, we report on structural and electrical properties of boron-doped epitaxial diamond layers grown on (113) substrates. Properties of the diamond layers have been investigated by means of scanning electron microscopy, atomic force microscopy, Hall effect, secondary ion mass spectrometry and Raman spectroscopy. Our results show that boron-doped diamond layers can be grown on (113) substrates at high deposition rates with atomically flat surfaces, excellent electrical properties and high boron incorporation efficiency.

Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Smrkovský, P., Popelka, S.
  • Publikace: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2021, 218(23), 1-7. ISSN 1862-6300.
  • Rok: 2021
  • DOI: 10.1002/pssa.202100218
  • Odkaz: https://doi.org/10.1002/pssa.202100218
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and local lifetime reduction. Deep-level transient spectroscopy in combination with open-circuit voltage decay measurement shows that the carrier lifetime is reduced by increased carrier recombination on Z(1)/Z(2), EH3, and possibly RD4 levels. The lifetime degrades swiftly and the ON-state carrier modulation capability of high-voltage devices can be easily lost already at very low fluences. The results further show that the proton irradiation provides an excellent tool for local lifetime tailoring. The carrier lifetime can be easily set by proton fluence and localized by proton energy. The proper local lifetime reduction speeds up diode recovery without an undesirable increase in the forward voltage drop. However, attention must be taken to properly locate the damage maximum so as not to increase device leakage.

Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

  • DOI: 10.1109/TED.2020.3038713
  • Odkaz: https://doi.org/10.1109/TED.2020.3038713
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy (DLTS), C–V profiling, and open-circuit voltage decay (OCVD) measurements. The number of introduced defects in SiC is higher, also the degradation of carrier lifetime and carrier removal proceeds more swiftly in SiC than those in silicon. However, smaller dimensions and a higher doping level of the n-base of the SiC diode compensate for these negative effects. As a result, the SiC p-i-n diode exhibits substantially higher resistance to neutron irradiation at higher fluences when the diode loses its ON-state carrier modulation capability. SiC also shows a negligible effect of irradiation on leakage current due to the wider bandgap. One may assume a better reliability of SiC bipolar devices over the silicon in a high neutron radiation environment.

Displacement damage and total ionisation dose effects on 4H-SiC power devices

  • DOI: 10.1049/iet-pel.2019.0049
  • Odkaz: https://doi.org/10.1049/iet-pel.2019.0049
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal–oxide–semiconductor field-effect transistors. According to the authors’ study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV

  • DOI: 10.1002/pssa.201900312
  • Odkaz: https://doi.org/10.1002/pssa.201900312
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. Radiation defects are characterized by capacitance deep‐level transient spectroscopy and C‐V measurement. The stability of introduced defects and their effect on carrier lifetime reduction is discussed, as well.

Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S.
  • Publikace: Silicon Carbide and Related Materials 2018. Uetikon-Zurich: Trans Tech Publications, 2019. p. 718-721. Materials Science Forum. vol. 963. ISSN 0255-5476. ISBN 978-3-0357-1332-9.
  • Rok: 2019

Local Lifetime Control in 4H-SiC by Proton Irradiation

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S., Schoner, A.
  • Publikace: Silicon Carbide and Related Materials 2017. Uetikon-Zurich: Trans Tech Publications, 2018. p. 436-439. Materials Science Forum. vol. 924. ISSN 1662-9752. ISBN 978-3-0357-1145-5.
  • Rok: 2018
  • DOI: 10.4028/www.scientific.net/MSF.924.436
  • Odkaz: https://doi.org/10.4028/www.scientific.net/MSF.924.436
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The effect of local lifetime control by proton irradiation on the OCVD response of a 10 kV SiC PiN diode was investigated. Carrier lifetime was reduced locally by irradiation with 800 keV protons at fluences up to 1x1011 cm-2. Radiation defects were characterized by DLTS and C-V profiling; excess carrier dynamics were measured by the OCVD and analyzed using the calibrated device simulator ATLAS from Silvaco, Inc. Results show that proton implantation followed by low temperature annealing can be used for controllable local lifetime reduction in SiC devices. The dominant recombination centre is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. The local lifetime reduction, which improves diode recovery, can be monitored by OCVD response and simulated using the SRH model accounting for the Z1/2 defect.

Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S., Schöner, A.
  • Publikace: IEEE Transactions on Electron Devices. 2018, 65(10), 4483-4489. ISSN 0018-9383.
  • Rok: 2018
  • DOI: 10.1109/TED.2018.2866763
  • Odkaz: https://doi.org/10.1109/TED.2018.2866763
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at fluences up to 1e11 cm-2. Results show that proton irradiation followed by annealing at 370ºC can be used for local and controllable reduction of carrier lifetime in SiC devices. The dominant recombination center is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. Proton irradiation substantially improves diode turn OFF while its effect on the forward voltage drop and leakage is not so harmful. Comparison of the technology curve for the unirradiated and proton irradiated p-i-n diode then clearly show that proton irradiation provides a superior trade-off between the static and dynamic losses.

Total Irradiation Dose Effects on 4H-SiC Power Devices

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S.
  • Publikace: ISPS'18 Proceedings. Praha: CTU. Czech Technical University Publishing House, 2018. p. 85-91. ISBN 978-80-01-06469-6.
  • Rok: 2018
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The effect of neutron, electron and proton irradiation on electrical characteristics of different SiC power devices (JBS and PiN diodes, JFETs and MOSFETs) was investigated. DLTS investigation showed that above mentioned projectiles introduce similar deep acceptor levels (electron traps) in the SiC bandgap which compensate shallow donors, decrease carrier mobility and lifetime. The key degradation effect occurring in unipolar devices is the increase of the ON-state resistance which is caused by the compensation of the low doped n-type drift region and simultaneous lowering of electron mobility. In bipolar devices, high introduction rates of lifetime killing defects (the Z1/Z2 centers) cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation in the ON state leading to a sharp increase of the forward voltage drop. In the case of SiC power switches (JFET, MOSFET), these effects are accompanied by the shift of the threshold voltage. This effect is critical for MOSFETs since they contain the charge sensitive oxide layer. According to our study, the JBS diode and JFET can be considered the most radiation resistant devices.

Lifetime Control in SiC PiN Diodes Using Radiation Defects

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S.
  • Publikace: Silicon Carbide and Related Materials 2016. Zurich: TRANS TECH PUBLICATIONS LTD, 2017. p. 463-466. Materials Science Forum. vol. 897. ISSN 1662-9752. ISBN 978-3-0357-1043-4.
  • Rok: 2017
  • DOI: 10.4028/www.scientific.net/MSF.897.463
  • Odkaz: https://doi.org/10.4028/www.scientific.net/MSF.897.463
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Application of radiation defects for lifetime control in contemporary SiC PiN diodes was investigated using the calibrated device simulator ATLAS from Silvaco, Inc. Recombination models accounting for the effect of deep levels introduced by the irradiation were set according to experimental results obtained by C-V and DLTS measurements performed on low-doped n-type SiC epilayers irradiated with 4.5 MeV electrons and 670 keV protons. Global (4.5 MeV electron irradiation) and local (700 keV proton irradiation) lifetime reduction was then applied on the 2A/10kV SiC PiN diode and the ON-state and reverse recovery characteristics were simulated and compared. Results show that the proton irradiation can substantially improve the trade-off between the diode ON-state and turn-OFF losses. Compared to the electron irradiation, the local lifetime killing by protons allows achieving better trade-off and softer recovery curves.

Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment

  • DOI: 10.1016/j.microrel.2017.05.015
  • Odkaz: https://doi.org/10.1016/j.microrel.2017.05.015
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    This paper deals with the operation of neutron irradiated 1700V SiC V-JFET in proposed DC-DC converters. The influence of irradiated V-JFET on the function of DC-DC converters are investigated. The measured results are compared with TCAD MixedMode simulation.

Radiation resistance of wide-bandgap semiconductor power transistiors

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S.
  • Publikace: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2017, 214(4), ISSN 1862-6300.
  • Rok: 2017

Deep Level Characterization of 5 MeV proton irradiated SiC PiN diodes

  • Autoři: Alfieri, G., Mihaila, A., Ayedh, H.M., Svensson, B.G., prof. Ing. Pavel Hazdra, CSc., Godignon, P., Millan, J., Kicin, S.
  • Publikace: Silicon Carbide and Related Materials 2015. Pfaffikon: Trans Tech Publications Ltd., 2016. p. 308-311. Materials Science Forum. ISSN 0255-5476. ISBN 978-3-0357-1042-7.
  • Rok: 2016

Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics

  • Autoři: Popelka, S., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Silicon Carbide and Related Materials 2015. Pfaffikon: Trans Tech Publications Ltd., 2016. p. 856-859. Materials Science Forum. ISSN 0255-5476. ISBN 978-3-0357-1042-7.
  • Rok: 2016

Optimization of 1700V of 4H-SiC JBS Diode Parameters

  • Autoři: Rupendra Kumar Sharma, Ph.D., prof. Ing. Pavel Hazdra, CSc., Popelka, S., Mihaila, A., Bartolf, H.
  • Publikace: Silicon Carbide and Related Materials 2015. Pfaffikon: Trans Tech Publications Ltd., 2016. p. 782-785. Materials Science Forum. ISSN 0255-5476. ISBN 978-3-0357-1042-7.
  • Rok: 2016

Radiation Damage in 4H-SiC and Its Effect on Power Device Characteristics

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

  • DOI: 10.1109/TED.2015.2421503
  • Odkaz: https://doi.org/10.1109/TED.2015.2421503
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.

Investigation of Deep Levels in SiC-Schottky Diodes with Frequency Resolved Admittance Spectroscopy

  • Autoři: Pertermann, E., Lutz, J., Rupendra Kumar Sharma, Ph.D., prof. Ing. Pavel Hazdra, CSc., Popelka, S., Felsl, H.P., Niedernostheide, H.J., Schulze, H.J.
  • Publikace: 17th European Conference on Power Electronics and Applications. Brussels: EPE Association, 2015. ISBN 9789075815238.
  • Rok: 2015
  • DOI: 10.1109/EPE.2015.7311785
  • Odkaz: https://doi.org/10.1109/EPE.2015.7311785
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy (FRAS). The results obtained by FRAS are compared with deep level transient spectroscopy measurement.

Simulation and Characterization of 4H-SiC JBS Diodes Irradiated by Hydrogen and Carbon Ions

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with simulation and characterization of 4H-SiC JBS diodes irradiated by hydrogen and carbon Ions.

Simulation and Characterization of Ion Irradiated 4H-SiC JBS Diode

The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics

The Effectof Light Ion Irradiation on 4H-SiC MPS Power Diode Characteristics: Experiment and Simulation

  • DOI: 10.1109/TNS.2015.2395712
  • Odkaz: https://doi.org/10.1109/TNS.2015.2395712
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    In this article, the effect of local radiation damage on the electrical characteristics of 1700 V 4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects introduced by irradiation with 670 keV protons were placed into the low–doped n-type epi–layer and their influence on diode characteristics were characterized by capacitance DLTS, C-V profiling and I-V measurements. Simulation model laccounting for the effect of proton irradiation was developed, calibrated and used for analysis of underlying effects and temperature dependencies.

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Popelka, S., Ing. Vít Záhlava, CSc.,
  • Publikace: Silicon Carbide and Related Materials 2014. Uetikon-Zurich: Trans Tech Publications, 2015. p. 785-788. Materials Science Forum. ISSN 0255-5476. ISBN 978-3-03835-478-9.
  • Rok: 2015

Characterization and simulation of neutron irradiated JBS silicon carbide diode structures

  • Autoři: Popelka, S., prof. Ing. Pavel Hazdra, CSc., Ing. Vít Záhlava, CSc.,
  • Publikace: IC-MAST - 3rd International Conference on Materials and Applications for Sensors and Transducers. Zürich: Transtech Publications, 2014. pp. 151-154. Key Engineering Materials. ISSN 1013-9826. ISBN 9783038350514.
  • Rok: 2014

Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold

  • DOI: 10.1109/LED.2014.2298754
  • Odkaz: https://doi.org/10.1109/LED.2014.2298754
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Fast recovery p-i-n diode with anode p-n junction modified by the radiation-enhanced diffusion (RED) of gold is presented. The RED of gold is shown to provide the local lifetime control of excess carriers, the compensation of n-base doping profile from n-type to p-type, and the enhancement of concentration of two gold-related deep levels. The deep level Au−/0 (EC − 0.549 eV) controls the low-level lifetime, whereas the gold–hydrogen pair (EC − 0.215 eV) the high-level lifetime. This feature eliminates the drawback of negative temperature coefficient of forward voltage drop of the RED with palladium and platinum, where only a single deep level, which controls the high-level lifetime, is enhanced. The RED of gold provides the maximal reverse bias safe operation area at the annealing temperature of 600 °C, whereas the RED of palladium at 650 °C.

ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

  • DOI: 10.1016/j.sse.2014.02.004
  • Odkaz: https://doi.org/10.1016/j.sse.2014.02.004
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C–V profiling and forward I–V curves. Calibration procedure of model parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated and measured forward I–V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices.

Operation of 4H-SiC High Voltage Normally-off V-JFET in Radiation Hard Conditions: Simulation and Experiment

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    This paper deals with effect of neutron irradiation on static and dynamic characteristics of high voltage 4H-SIC JFET

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and Their Effect on Power JBS SiC Diode Characteristics

Point defects in 4H-SiC epilayers introduced by neutron irradiation

The effect of fast ion irradiation on 1700V 4H-SiC MPS diode: Experimental and Simulation

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with experimental and simulation studies of 1700V 4H-SiC MPS diodes irradiated with fast light ions.

Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Oswald, J., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Thin Solid Films. 2013, 543 83-87. ISSN 0040-6090.
  • Rok: 2013

Radiation defects produced in 4H-SiC epilayers by proton and alpha particle irradiation

  • DOI: 10.4028/www.scientific.net/MSF.740-742.661
  • Odkaz: https://doi.org/10.4028/www.scientific.net/MSF.740-742.661
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Electronic properties of radiation damage produced in 4H-SiC epilayer by proton and alpha particle irradiation were investigated and compared. 4H-SiC epilayers, which formed the low doped n-base of Schottky barrier power diodes, were irradiated to identical depth with 550 keV protons and 1.9 MeV alphas. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurements.

Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition

  • Autoři: Hospodková, A., Zíková, M., Pangrác, J., Oswald, J., Kubištová, J., Kuldová, K., prof. Ing. Pavel Hazdra, CSc., Hulicius, E.
  • Publikace: Journal of Physics D: Applied Physics. 2013, 46(9), 1-6. ISSN 0022-3727.
  • Rok: 2013
  • DOI: 10.1088/0022-3727/46/9/095103
  • Odkaz: https://doi.org/10.1088/0022-3727/46/9/095103
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The aim of the work is to redshift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the MOVPE prepared structure of InAs/GaAs QDs covered by GaAsSb strain reducing layer. Results proved that the type I or type II band alignment can be controlled by both, GaAsSb composition and QD size.

Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences of both proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very low fluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage.

Radiation Enhanced Diffusion of Nickel in Silicon Diodes

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    High-power P-I-N diodes (2.5 kV, 150 A) with sputtered NiV and NiCr layers at anode were implanted by 10 MeV helium ions and subsequently annealed in the range 550 - 800 oC. The devices were characterized using XPS, DLTS and OCVD. Leakage current, forward voltage drop and reverse recovery measurements were measured as well. The Radiation Enhanced Diffusion (RED) of nickel was registered after 20 min. annealing between 675 and 725 oC. The evidence was provided by depth profiling (DLTS). The effect of the RED of nickel on device electrical parameters was evaluated. Contrary to the palladium, the RED of nickel is not sufficient for the local control of carrier lifetime in power devices.

GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission

  • Autoři: Hospodková, A., Pangrác, J., Oswald, J., Kuldová, K., Vyskočil, J., Hulicius, E., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of EWMOVPE XIV. Wroclaw: Wroclaw University of Technology, 2011. pp. 105-109.
  • Rok: 2011
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper investigates application of GaAsSb strain reducing layers for emission of InAs/GaAs quantum dots at long wavelengths and increasing their emission efficiency.

Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V., Buršíková, V.
  • Publikace: Solid State Phenomena. 2011, 178-179(1), 398-403. ISSN 1012-0394.
  • Rok: 2011

InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

  • Autoři: Hospodková, A., Pangrác, J., Vyskočil, J., Oswald, J., Vetushka, A., Caha, O., prof. Ing. Pavel Hazdra, CSc., Kuldová, K., Hulicius, E.
  • Publikace: Journal of Crystal Growth. 2011, 317(1), 39-42. ISSN 0022-0248.
  • Rok: 2011

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

  • Autoři: Hospodková, A., Pangrác, J., Oswald, J., prof. Ing. Pavel Hazdra, CSc., Kuldová, K., Vyskočil, J., Hulicius, E.
  • Publikace: Journal of Crystal Growth. 2011, 315(1), 110-113. ISSN 0022-0248.
  • Rok: 2011

Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc., Buršíková, V.
  • Publikace: Physica Status Solidi (c). 2011, 8(3), 948-951. ISSN 1610-1634.
  • Rok: 2011

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

  • DOI: 10.4028/www.scientific.net/SSP.178-179.398
  • Odkaz: https://doi.org/10.4028/www.scientific.net/SSP.178-179.398
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 degC. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt and Pd form deep levels in increased extent at the presence of radiation defects above 600 degC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC - 0.203 eV) and donor level V0/+ (EC - 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 degC.

Samoorganizované nanostruktury v mikroelektronice

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Článek se zabývá významem samoorganizovaných nanostruktur (kvantových teček a kvantových drátků) pro rozvoj moderní mikroelektroniky.

Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 um Bands

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Oswald, J., Komarnitskyy, V., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Journal of Nanoscience and Nanotechnology. 2011, 11(8), 6804-6809. ISSN 1533-4880.
  • Rok: 2011
  • DOI: 10.1166/jnn.2011.4223
  • Odkaz: https://doi.org/10.1166/jnn.2011.4223
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals wit preparation and characterization of self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 um bands.

Combined lifetime killing by platinum and fast light ions in silicon power diode: thermal stability of introduced radiation defects

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: ISPS'10 PROCEEDINGS. Praha: České vysoké učení technické v Praze, 2010. pp. 129-133. ISBN 978-80-01-04602-9.
  • Rok: 2010
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals about the impact of platinum on the thermal stability of radiation defects in silicon power diode which were introduced by fast light ion irradiation.

Electro- and photoluminescence of InAs/GaAs quantum dot structures

  • Autoři: Oswald, J., prof. Ing. Pavel Hazdra, CSc., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J., Vyskočil, J.
  • Publikace: Journal of Physics: Conference Series. 2010, 245(1), 012080. ISSN 1742-6588.
  • Rok: 2010

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

  • Autoři: Hospodková, A., Hulicius, E., Pangrác, J., Oswald, J., Vyskočil, J., Kuldová, K., Šimeček, T., prof. Ing. Pavel Hazdra, CSc., Caha, O.
  • Publikace: Journal of Crystal Growth. 2010, 312(8), 1383-1387. ISSN 0022-0248.
  • Rok: 2010

Low-Temperature Formation of Deep Donor Layers by Proton Implantation: Effect of Hydrogen Plasma on Radiation Defect Removal

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc., Buršíková, V.
  • Publikace: ISPS'10 PROCEEDINGS. Praha: České vysoké učení technické v Praze, 2010. pp. 153-158. ISBN 978-80-01-04602-9.
  • Rok: 2010
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Hydrogen plasma efficiently removes majority of vacancy-related defects generated by proton implantation in both FZ and CZ substrates. Plasma and post-implantation annealing lead to appearing of new defects in Si band gap. These defects deteriorate electrical properties of thermal hydrogen-related shallow donors.

Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: Gettering and Defect Engineering in Semiconductor Technology XIII. Zürich: Transtech Publications, 2010. pp. 167-172. ISSN 0377-6883. ISBN 3-908451-74-4.
  • Rok: 2010
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals by the effect of contamination by platinum atoms on radiation defects in silicon. The influence of platinum on defect introduction rates and thermal stability is investigated.

Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: Solid State Phenomena. 2010, 156-158(156-158), 167-172. ISSN 1012-0394.
  • Rok: 2010

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: ECS Transactions: Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009). New Jersey: The Electrochemical Society, 2009. p. 55-65. B.O. Kolbesen, L. Fabry, D.Guibertoni, C.Claeys, M.Bersani, G. Pepponi. ISSN 1938-5862. ISBN 978-1-56677-740-7.
  • Rok: 2009
  • DOI: 10.1149/1.3204394
  • Odkaz: https://doi.org/10.1149/1.3204394
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration.

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: ECS Transactions: Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009). 2009, 23(3), 55-65. ISSN 1938-5862.
  • Rok: 2009
  • DOI: 10.1149/1.3204394
  • Odkaz: https://doi.org/10.1149/1.3204394
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration.

Engineering of MOVPE grown InAs/GaAs Quantum Dot Structures

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Oswald, J., Komarnitskyy, V., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Workshop 09 CTU REPORTS. Praha: České vysoké učení technické v Praze, 2009. pp. 156-157. ISBN 978-80-01-04286-1.
  • Rok: 2009
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with engineering of MOVPE grown InAs/GaAs quantum dot structures especially by means of use of the thin InGaAs strain reducing layer.

Hydrogenation of Platinum Introduced in Silicon by Radiation Enhanced Diffusion

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V., Buršíková, V.
  • Publikace: Materials Science and Engineering: B. 2009, 159(160), 342-345. ISSN 0921-5107.
  • Rok: 2009
  • DOI: 10.1016/j.mseb.2008.11.038
  • Odkaz: https://doi.org/10.1016/j.mseb.2008.11.038
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with hydrogenation of platinum atoms introduced in silicon by radiation enhanced diffusion. The interaction of defects and arising deep levels are investigated by means of deep level transient spectroscopy.

InAs/GaAs quantum dot structures emitting in the 1.55 μm band

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Oswald, J., Komarnitskyy, V., Kuldová, K., Hospodková, A., Vyskočil, J., Hulicius, E., Pangrác, J.
  • Publikace: IOP Conference Series: Materials Science and Engineering. 2009, 6(6), 012007. ISSN 1757-8981.
  • Rok: 2009
  • DOI: 10.1088/1757-899X/6/1/012007
  • Odkaz: https://doi.org/10.1088/1757-899X/6/1/012007
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with inversigationof InAs quantum dot structures embedded into GaAs for development of semiconductor oprical sources emitting in the 1.55 μm band. Special attention is paid to the use of the strain deducing layer.

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Oswald, J., Komarnitskyy, V., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Superlattices and Microstructures. 2009, 46(1), 324-327. ISSN 0749-6036.
  • Rok: 2009
  • DOI: 10.1016/j.spmi.2008.12.002
  • Odkaz: https://doi.org/10.1016/j.spmi.2008.12.002
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper investigates the influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. The structures were investigated by means of atomic force microscopy and photoluminescence spectroscopy.

Influence of Radiation Defects on Formation of Thermal Donors in Silicon Irradiated with High Energy Helium Ions

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: Materials Science and Engineering: B. 2009, 159(160), 346-349. ISSN 0921-5107.
  • Rok: 2009
  • DOI: 10.1016/j.mseb.2008.10.008
  • Odkaz: https://doi.org/10.1016/j.mseb.2008.10.008
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper investigates the influence of radiation defects on formation of thermal donors in silicon irradiated with high energy helium ions. Defect interacion were studied by deep level transient spectroscopy.

Synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Workshop 09 CTU REPORTS. Praha: České vysoké učení technické v Praze, 2009. pp. 150-151. ISBN 978-80-01-04286-1.
  • Rok: 2009
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers.

Characterisation and Simulation of Electronic States in MOVPE Grown InAs/GaAs Quantum Dots

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Atef, M., Komarnitskyy, V., Oswald, J., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Proceedings of Workshop 2008. Praha: Czech Technical University in Prague, 2008. pp. 208-209. ISBN 978-80-01-04016-4.
  • Rok: 2008
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with characterisation and simulation of electronic states in MOVPE grown InAs/GaAs quantum dot structures

Dynamic avalanche in diodes with local lifetime control by means of palladium

  • DOI: 10.1016/j.mejo.2007.11.003
  • Odkaz: https://doi.org/10.1016/j.mejo.2007.11.003
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper shows both theoretically and experimentally the increase of the static breakdown voltage and reduction of the dynamic avalanche after radiation enhabced diffusion of palladium into the n-base of power diode.

Enhanced formation of shallow donors in FZ and CZ silicon irradiated by MeV protons and alpha-particles

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of Workshop 2008. Praha: Czech Technical University in Prague, 2008. ISBN 978-80-01-04016-4.
  • Rok: 2008
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with an enhanced formation of shallow donors in FZ and CZ silicon irradiated by MeV protons and alpha-particles

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterised by photomodulated reflectance

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Oswald, J., El-Sayed Abd-Elaal, M., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Materials Science and Engineering: B. 2008, 147(2-3), 175-178. ISSN 0921-5107.
  • Rok: 2008

Local Donor Doping by Proton Implantation in p+nn+ Diodes Fabricated on Different Silicon Substrates

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: ISPS 08 Proceedings. Praha: České vysoké učení technické v Praze, 2008. pp. 49-54. ISBN 978-80-01-04139-0.
  • Rok: 2008
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with local donor doping by proton implantation in p+nn+ diodes fabricated on different silicon substrates

Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

Proton implantation in silicon: evolution of deep and shallow defect states

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2008, ISS.6-2008(10), 1374-1374-1378. ISSN 1454-4164.
  • Rok: 2008
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with formation of shallow and deep defects states appeared in FZ and CZ silicon after implantation with MeV protons and subsequent annealing.

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: Gettering and Defect Engineering in Semiconductor Technology XII - Proceedings of the 12th International Autumn Meeting EMFCSC. Zürich: Transtech Publications, 2008. p. 201-206. ISSN 1012-0394. ISBN 978-3-908451-43-3.
  • Rok: 2008
  • DOI: 10.4028/www.scientific.net/SSP.131-133.201
  • Odkaz: https://doi.org/10.4028/www.scientific.net/SSP.131-133.201
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with the study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing. Introduction and thermal stability of introduced deep and shallow levels was investigated by means of DLTS and CV measurement.

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing.

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterised by photomodulated reflectance

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterised by photomodulated reflectance

Innovation of Courses on Design of Integrated Electronic Systems

  • Autoři: prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of Workshop 2007. Praha: České vysoké učení technické v Praze, 2007. pp. 248-249. ISBN 978-80-01-03667-9.
  • Rok: 2007

Local Lifetime Control in Silicon Power Diode by Ion Irradiation: Introduction and Stability of Shallow Donors

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: IET Circuits, Devices & Systems. 2007, 1(5), 321-326. ISSN 1751-858X.
  • Rok: 2007

Low-Temperature Radiation Enhanced Diffusion of Palladium and Platinum in Silicon

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Low-Temperature Radiation Enhanced Diffusion of Palladium and Platinum in Silicon

OPTICAL CHARACTERISATION OF MOVPE GROWN ENGINEERED InAs/GaAs QUANTUM DOT STRUCTURES

  • Autoři: prof. Ing. Pavel Hazdra, CSc., doc. RNDr. Jan Voves, CSc., Oswald, J., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J.
  • Publikace: Proceedings of Workshop 2007. Praha: České vysoké učení technické v Praze, 2007. pp. 252-253. ISBN 978-80-01-03667-9.
  • Rok: 2007
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    OPTICAL CHARACTERISATION OF MOVPE GROWN ENGINEERED InAs/GaAs QUANTUM DOT STRUCTURES

Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices

Simulation of Electronic States in InAs/GaAs Quantum Dots

  • Autoři: El-Sayed Abd-Elaal, M., prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V., Oswald, J., Kuldová, K., Hulicius, E., Pangrác, J.
  • Publikace: Electronic Devices and Systems - IMAPS CS International Conference 2007. Brno: Vysoké učení technické v Brně, 2007. pp. 11-16. ISBN 978-80-214-3470-7.
  • Rok: 2007
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with simulation of electronic states in MOVPE grown InAs/GaAs quantum dots which supports interpretation of experimental data obtained by photoluminescence and photoreflectance .measurements.

Study of InAs/GaAs quantum dots grown by LP-MOVPE

  • Autoři: El-Sayed Abd-Elaal, M., prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V., Oswald, J., Kuldová, K., Hulicius, E., Pangrác, J.
  • Publikace: Acta Metallurgica Slovaca Spec.Issue. 2007, 13(5-9), 99-104. ISSN 1335-1532.
  • Rok: 2007

Advanced Methods for Low-Temperature In-Diffusion of Platinum in Silicon

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Advanced Methods for Low-Temperature In-Diffusion of Platinum in Silicon

Fast Recovery Diode with Novel Local Lifetime Control

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    A novel method for local lifetime control is presented using low-temperature diffusion of palladium stimulated by radiation defects.

Helium Irradiation for Advanced Lifetime Control in Silicon: New Recombination Centers and Their Interaction Stimulated by Isochronal Annealing

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: The Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Bratislava: Slovak University of Technology, 2006. p. 201-204. ISBN 978-1-4244-0396-7.
  • Rok: 2006

Lifetime control in silicon power P-i-N diode by ion irradiation: Suppresion of undesired leakage

Local Lifetime Control by Means of Palladium

Local Lifetime Control in Silicon by Hydrogen and Helium Irradiation : Introduction and Stability of Shallow Donors

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: ISPS 06 Proceedings. Praha: Ediční středisko ČVUT, 2006. p. 49-54. ISSN 1751-858X. ISBN 80-01-03524-7.
  • Rok: 2006
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Enhanced formation of shallow donors (SDs) in hydrogen or helium-irradiated and subsequently annealed float-zone n-type silicon is investigated. Ion energies, irradiation fluences and annealing temperatures were chosen in ranges typically used for local lifetime control in silicon power devices. Introduced radiation defects and SDs were investigated by deep-level transient spectroscopy and C-V profiling. Results show that radiation damage produced by helium ions remarkably enhances formation of thermal donors (TDs) when the annealing temperature exceeds 375degC, i.e. when the majority of vacancy-related recombination centres anneal out. Proton irradiation introduces hydrogen donors (HDs) which form a Gaussian peak at the proton end-of-range. Their concentration linearly increases with proton fluence and changes dramatically during post-irradiation annealing between 100 and 200degC since HD constituents are reacting with radiation damage. Their annealing in this temperature range is influenced by the electric field. If annealing temperature exceeds 400degC, HDs disappear and the excessive shallow doping is caused, as in the case of helium irradiation, by TDs enhanced by radiation damage. Shallow doping introduced by both hydrogen and helium can have a detrimental influence on blocking voltage of power diodes if high irradiation fluences or wrong annealing conditions are chosen.

Local Lifetime Control in Silicon by Radiation Controlled Diffusion of Platinum

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Novel method of local lifetime control in silicon is presented. The method is based on shaping the concentration profile of substitutional palladium using low-temperature diffusion from palladium silicide stimulated by radiation defects from high-energy alpha-particle irradiation. For the first time, this process is shown functional in power devices in a wide range of annealing temperatures (450 - 725 oC). The maximal reduction of reverse recovery charge is found for low annealing temperatures (450 - 500 oC). The optimal diode electrical parameters (leakage current, reverse recovery charge, turn-off loss, dynamic avalanche charge) are found for the annealing temperature of 600 oC. The new method provides much higher thermal budget than the standard He irradiation.

Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    This paper describes the Low-Temperature Radiation Controlled Diffusion of Palladium and Platinum in Silicon for Advanced Lifetime Control

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Paper deals with optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Optical Properties of Subnanometric InAs Structures in GaAs Grown by MOVPE

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Optical Properties of Subnanometric InAs Structures in GaAs Grown by MOVPE

Thermal Donor Formation in Silicon Enhanced by High-Energy Helium Irradiation

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: Nuclear Instruments and Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms. 2006, 253(1), 187-191. ISSN 0168-583X.
  • Rok: 2006

Thermal Donor Formation in Silicon Enhanced by High-Energy Helium Irradiation

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: The E-MRS 2006 Spring Meeting - Book of abstracts. Strasbourg: E-MRS, 2006. pp. U-PII.12.
  • Rok: 2006
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Thermal Donor Formation in Silicon Enhanced by High-Energy Helium Irradiation

Thermal Donors in Silicon Irradiated by MeV Protons and Alphas: Effect of Post-Irradiation Annealing

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: WORKSHOP 2006. Praha: České vysoké učení technické v Praze, 2006. pp. 316-317. ISBN 80-01-03439-9.
  • Rok: 2006
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Thermal Donors in Silicon Irradiated by MeV Protons and Alphas: Effect of Post-Irradiation Annealing

Ultrathin InAs and modulated InGaAs Layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy

Control of Platinum Profiles in Silicon by Radiation Enhanced Diffusion

Fast Recovery Diode with Local Lifetime Control Using High-Energy Platinum and Helium Implantation

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Fast-recovery diode from Polovodiče a. s. is subject to novel method of local lifetime control based on low-temparature diffusion of platinum controlled by radiation defects.

High-Power P-i-N Diode with Local Lifetime Control Using Palladium Diffusion Controlled by Radiation Defects

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Novel method for local lifetime control in silicon high-power diodes from Polovodiče a. s. based on low-temperature diffusion of palladium.

Local Lifetime Control in Advanced Silicon Power Devices: Influence of Post-Irradiation Annealing

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: EDS '05 IMAPS CS International Conference Proceedings. Brno: Vysoké učení technické v Brně, 2005. pp. 44-49. ISBN 80-214-2990-9.
  • Rok: 2005

Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability

Optical Characterization of MOVPE Grown Delta-InAs Layers in GaAs

Platinum In-Diffusion Controlled by Radiation Defects for Advanced Lifetime Control in High Power Devices

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Use of radiation defects for control of platinum in-diffusion in silicon for local lifetime control

Platinum In-Diffusion Controlled by Radiation Defects for Advanced Lifetime Control in High Power Silicon Devices

Radiation Defect Profiles Created by High Energy Protons and Alphas: Simulation of Their Influence on Silicon Power Diodes

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of Workshop 2005. Praha: České vysoké učení technické v Praze, 2005. pp. 162-163. ISBN 80-01-03201-9.
  • Rok: 2005

Radiation Enhanced Diffusion of Implanted Platinum in Silicon Guided by Helium Co-Implantation for Arbitrary Control of Platinum Profile

Ultrathin MOVPE Grown InAs Layers in GaAs Characterized by Photomodulated Reflectance Spectroscopy

Accurate identification of radiation defect profiles in silicon after irradiation with protons and alpha-particles in the MeV range

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with accurate identification of radiation defect profiles in silicon after irradiation with protons and alpha-particles in the MeV range

Alpha-Particle Irradiation as a Mean for Shaping the Platinum Depth Profile for Local Lifetime Control in Silicon

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Pt diffusion vs. Pt implantation for local lifetime control in silicon power diodes.

Alpha-Particle Irradiation as a Mean for Shaping the Platinum Depth Profile for Local Lifetime Control in Silicon Power Devices

Axial lifetime cotrol in silicon power diodes by irradiation with protons, alphas, low- and high- energy electrons

Controlled gettering of implanted platinum in silicon produced by helium co-implantation

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    The paper deals with controlled gettering of implanted platinum in silicon produced by helium co-implantation

Diffusion from Platinum Silicide for the Local Lifetime Control in Silicon

Effect of proton and alpha irradiation on advanced silicon power devices: defect profiles and stability

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: ASDAM 2004 - Conference Proceedings. Košice: Slovak Academy of Science, 2004. p. 223-226. ISBN 0-7803-8535-7.
  • Rok: 2004

Identification of Radiation Defect profiles for Accurate Simulation of Power Devices Irradiated with Protons, Alphas and Low-Energy Electrons

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: 7th International Seminar on Power Semiconductor. Praha: Ediční středisko ČVUT, 2004. pp. 177-182. ISBN 80-01-03046-6.
  • Rok: 2004

Improvements of InGaAs Layer Properties by MOVPE Digital Growth -InAs/GaAs Superlattices for Laser Active Region

  • Autoři: Hospodková, A., Pangrác, J., Hulicius, E., Oswald, J., prof. Ing. Pavel Hazdra, CSc., doc. RNDr. Jan Voves, CSc., Mačkal, A., Pacherová, O., Melichar, K., Šimeček, T.
  • Publikace: The Twelfth International Conference on Metal Organic Vapor Phase Epitaxy - Proceedings post deadline inset. Warrendale: The Minerals, Metals & Materials Society, 2004. pp. ?.
  • Rok: 2004

Ion irradiation for advanced lifetime control in semiconductors and simulation of its effect on silicon power devices

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Abstracts of 2nd Ukrainian Scientific Conference on PHYSICS of SEMICONDUCTORS. Chernivtsi: Yuriy Fedkovych Chernivtsi National University, 2004. pp. 228-229. ISBN 966-568-710-7.
  • Rok: 2004

Non-Destructive Characterization of Deep Damage Layers in Silicon Introduced by Proton and Alpha=Particle Irradiation

  • Autoři: Komarnitskyy, V., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of Workshop 2004. Praha: České vysoké učení technické v Praze, 2004. pp. 420-421. ISBN 80-01-02945-X.
  • Rok: 2004

Novel Methods of Local Lifetime Control in Semiconductors

Optical characterization of MOVPE grown delta-InAs layers in GaAs

  • Autoři: prof. Ing. Pavel Hazdra, CSc., doc. RNDr. Jan Voves, CSc., Hulicius, E., Pangrác, J.
  • Publikace: 7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies. Montpellier: Université Montpellier II, 2004. pp. 73-74.
  • Rok: 2004

Platinum Implantation Versus Platinum Silicide for the Local Lifetime Control of Power P-i-N Diode

Proton Irradiation Matrix Experiment for Electrical Parameter Optimization of PT-IGBT Power Transistors

Proton Irradiation Matrix Experiment for Electrical Parameter Optimization of PT-IGBT Power Transistors

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    600V PT IGBT was subjected to proton irradiation in order to optimize dynamic parameters.

Radiation Enhanced Diffusion of Implanted Platinum in Silicon Guided by Helium Co-Implantation for Arbitrary Control of Platinum Profile

Radiative Recombination Mechanism of Subnanometric InAs/GaAs Laser Structures

Sloping versus local lifetime control in silicon power P-i-N diode

6th International Student Conference on Electrical Engineering POSTER 2002

Accurate control of recombination centre introduction in silicon

Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-PArticles in the MeV Range

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: GADEST 2003. Zürich: Scitec Publications Ltd, 2003. pp. 387-392. ISBN 3-908450-82-9.
  • Rok: 2003

Advanced Local Lifetime Control for Higher Reliability of Power Devices

Advanced Local Lifetime Control for Higher Reliability of Power Devices

Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation

Distribution of Radiation Damage in Silicon Power Diodes Irradiated with MeV Protons

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Komarnitskyy, V.
  • Publikace: Electronic Devices and Systems 03 - Proceedings. Brno: VUT v Brně, FEI, Ústav mikroelektroniky, 2003. pp. 307-310. ISBN 80-214-2452-4.
  • Rok: 2003

Electrical Parameter Variation of PT-IGBT by Backside Proton Irradiation

Helium Irradiated High-Power P-i-N Diode with Low ON-State Voltage Drop

IGBT Lifetime Killing Process Design Using Simulation Tools

Impact of the Electron, Proton and Helium Irradiation on the Forward I-V Characteristics of High-Power P-i-N Diode

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Experimental and simulation work showing the impact of irradiation on device characteristocs in a wide temperature range.

Improvement of PT-IGBT Switching Speed by Backside Proton Irradiation

InAs delta-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy

Innovation of Courses on Programmable Integrated Circuit Design

  • Autoři: prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of Workshop 2003. Praha: Czech Technical University in Prague, 2003. p. 428-429. ISBN 80-01-02708-2.
  • Rok: 2003

Lasers with Thin Strained InAs Layers in GaAs - Electro-optical Characterisation and Operation at Elevated Temperatures

  • Autoři: Mačkal, A., prof. Ing. Pavel Hazdra, CSc., Hulicius, E., Oswald, J., Pangrác, J., Melichar, K., Hospodkova, A., Simecek, T.
  • Publikace: 10th EW MOVPE - Booklet of Extended Abstracts. Lecce: University of Lecce, 2003. pp. 227-230. ISBN 88-8305-007-X.
  • Rok: 2003

Lasers with Thin Strained InAs Layers in GaAs - Electroluminescence and Photoabsorption at Elevated Temperatures

  • Autoři: Mačkal, A., prof. Ing. Pavel Hazdra, CSc., Hulicius, E., Pangrác, J., Melichar, K.
  • Publikace: Proceedings of Workshop 2003. Praha: České vysoké učení technické v Praze, 2003. pp. 446-447. ISBN 80-01-02708-2.
  • Rok: 2003

Měření elektro-optických vlastností kvantově-rozměrových struktur na bázi InAs/GaAs - fotoproud a elektroluminiscence

  • Autoři: Mačkal, A., prof. Ing. Pavel Hazdra, CSc., Hulicius, E., Oswald, J., Pangrac, J., Melichar, K., Hospodkova, A., Simecek, T.
  • Publikace: Optické vlastnosti pevných látek v základním výzkumu a aplikacích. Brno: PřF Masarykovy Univerzity v Brně, 2003. pp. 12-13.
  • Rok: 2003

MOVPE Grown InAs/GaAs Quantum Nanostructures

  • Autoři: Hulicius, E., Oswald, J., Hospodkova, A., Pangrac, J., prof. Ing. Pavel Hazdra, CSc., Mačkal, A., Samokhin, E., Šimeček, T.
  • Publikace: Proceedings of the Annual Meeting of Taiwan Physical Society. Hua-Lieng: Dong Hua University, 2003. pp. 67-68.
  • Rok: 2003

Radiation defect distribution in silicon irradiated with 600 keV electrons

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Dorschner, H.
  • Publikace: Nuclear Instruments and Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms. 2003, 201(3), 513-519. ISSN 0168-583X.
  • Rok: 2003

The Application of Platinum-Silicide Anode Layer to Decrease the Static and Turn-Off Losses in High-Power P-i-N Diode

The Novel Concept of the Local Lifetime Control for High-Power Devices

The Novel Concept of the Local Lifetime Control for High-Power Devices

5th International Student Conference on Electrical Engineering POSTER 2001

Axial Lifetime Control by Irradiation with Protons, Alphas, Low- and High-Energy Electrons: Impact on Silicon Power Diode Parameters

Characterization of lasers with delta-InAs layers in GaAs

  • Autoři: prof. Ing. Pavel Hazdra, CSc., doc. RNDr. Jan Voves, CSc., Hulicius, E., Oswald, J., Pangrác, J., Melichar, K., Šimeček, T.
  • Publikace: Proceedings of Workshop 2002. Praha: České vysoké učení technické v Praze, 2002. pp. 424-425. ISBN 80-01-02511-X.
  • Rok: 2002

Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy

Delta-InAs structures embedded in GaAs grown by MOVPE characterised by electroluminescence and photocurrent spectroscopy

Design and Characterisation of MBE Grown HEMT Structures

Forward I-V Characteristics of the Electron, Proton and Helium Irradiated High-Power P-i-N Diodes

High-Power Devices - A New Challenge to Thin Films

High-Power P-i-N Diode With the Local Lifetime Control Based on the Proximity Gettering of Platinum

Lasers with delta-InAs layers in GaAs

New Methods of Local Lifetime Control

Optimum Lifetime Structuring in Silicon Power Diodes by Means of Various Irradiation Techniques

Parameter Optimization of the 600V PT IGBT Using the Backside Proton Irradiation

4th International Student Conference on Electrical Engineering POSTER 2000

5. mezinárodní studentská vědecká konference POSTER 2001

Current Filamentation under Resistive Switching Reverse Recovery

InAs/GaAs Lasers for Optical Communication: Preparation and Properties

Lasers with Delta-InAs Layer in GaAs

Local Lifetime Control by Light Ion Irradiation: Impact on Blocking Capability of Power P-i-N Diode

Optimum Lifetime Structuring in Silicon Power Diodes by Means of Various Irradiation Techniques

Study of Power Diodes for Higher Reliability and Energy Savings

The Dynamic Avalanche under Resistive Switching Reverse Recovery

3rd International Student Conference on Electrical Engineering POSTER 99

  • Autoři: Lhotská, L., Tůma, J., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of Workshop 2000. Praha: České vysoké učení technické v Praze, 2000. pp. 164. ISBN 80-01-02229-3.
  • Rok: 2000

A New Degree of Freedom in Diode Optimization: Arbitrary Axial Lifetime Profiles by Means of Ion Irradiation

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Vytvření libovolného axiálního profilu doby života iontovým ozářením.

Advanced Design of Lifetime Control for High-Power Devices in TCAD Environment

Blocking Capability of Power P-i-N Diodes Irradiated by Hydrogen and Helium Ions

Crossing point current of electron and proton irradiated power P-i-N diodes

Crossing Point Current of Power P-i-N Diodes: Impact of Lifetime Treatment

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Simulace a měření bodu křížení v propustné V-A charakteristice

Effect of Defects Produced by MeV H and He Ion Implantation on Characteristics of Power Silicon P-i-N Diodes

Effect of Defects Produced by MeV H and He Ion Implantation on Characteristics of Power Silicon P-i-N Diodes

Impact of Lifetime Control on the Reverse Recovery of High-Power P-i-N Diode

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Stykový průraz a dynamický lavinový jev výkonových diod. Simulace a měření.

Information Technology Research

Lokální řízení doby života v moderních výkonových polovodičových součástkách

  • Autoři: prof. Ing. Pavel Hazdra, CSc., prof. Ing. Jan Vobecký, DrSc., Rubeš, J.
  • Publikace: Sborník příspěvků ze semináře Odborné skupiny Polovodiče Fyzikální vědecké sekce Jednoty českých matematiků a fyziků. Praha: Jednota českých matematiků a fyziků, 2000. pp. 39-40. ISBN 80-7015-720-8.
  • Rok: 2000

New Recombination Centers for Modern Power Electronics

Quantum Size InAs/GaAs Lasers - Preparation and Properties

Advanced Design of Lifetime Control for High-Power Devices in TCAD Environment

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Non-standard design tasks in the optimization process of power device parameters

Advanced Design of Lifetime Control for High-Power Devices in TCAD Environment

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Speciální návrh křemíkových výkonových součástek pomocí lokálního řízení doby života

Divacancy Profiles in MeV Helium Irradiated Silicon from Reverse I-V Measurement

Excitation Spectrum of a PtLi-related Center in Silicon

  • Autoři: Tidlund, P., Kleverman, M., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Physical Review B. 1999, 59(7), 4858-4863. ISSN 1098-0121.
  • Rok: 1999

HVCTS - High Voltage Current Transient Spectroscopy

Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Defect engineering using different irradiation techniques for lifetime control in contemporary silicon power diodes is presented. Deep levels produced by high energy particle irradiation, electrons, protons and alphas, are characterized within the full depth of real silicon power diode (hundreds of μm) by means of newly developed non-destructive characterization tools: I-V profiling and high voltage current transient spectroscopy. In the light of received results, the advantages and drawbacks of different lifetime control techniques are discussed.

Open Circuit Voltage Decay Lifetime of Ion Irradiated Devices

Photoluminescence from the MOVPE Grown GaAs/GaAlAs Superlattices

  • Autoři: doc. RNDr. Jan Voves, CSc., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Proceedings of the 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques EW MOVPE VIII. Praha: AV ČR, Fyzikální ústav, 1999. pp. 385-388. ISBN 80-238-3551-3.
  • Rok: 1999

Radiation Defect Profiling in Silicon Devices

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Stanovení profilů radiačních poruch v křemíkových součástkách

Application-Specific Fast-Recovery Diode: Design and Performance

Diagnostics of Radiation Defect Profiles in Silicon

Free-Wheeling Diodes with Improved Reverse Recovery by Combined Electron and Proton Irradiation

Hydrogenation of Silicon Contaminants

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Kleverman, M.
  • Publikace: Workshop 98. Praha: České vysoké učení technické v Praze, 1998. pp. 299-300.
  • Rok: 1998

Measurement of Reverse Current for Radiation Defect Pofiling

OCVD Lifetime of Ion Irradiated P-i-N Diodes

Optimisation of a High-power P-I-N Diode for Advanced Switching Applications

Reconfigurable Peripherals of Microcontrollers

Application of High Energy Ion Beams for Local Lifetime Control in Silicon

Electrical Characterization of GeV Proton Irradiated Detectors

Investigation of Deep Level Capture Coefficients in Ion Irradiated Silicon

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Studium záchytných koeficientů hlubokých úrovní v iontově ozářeném křemíku

Ion Beam Synthesis of SiGe Layers

New Materials for Nuclear and Semiconductor Engineering

  • Autoři: Sopko, B., prof. Ing. Pavel Hazdra, CSc., Kohout, Z.
  • Publikace: Workshop 97. Praha: České vysoké učení technické v Praze, 1997. pp. 1043-1044.
  • Rok: 1997

Photoluminescence in the GaAs/GaAlAs Superlattices Proposed for Bloch Oscillations

Production of FZ "radhard" Silicon Wafers and Detectors in Prague

  • Autoři: Sopko, B., prof. Ing. Pavel Hazdra, CSc., Kohout, Z., Pospíšil, S., Mrázek, D.
  • Publikace: Radiation Hardening of Silicon Detectors. Genéve: CERN, 1997. pp. 2-7.
  • Rok: 1997
  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Vyroba a charakterizace radiacne odolnych detektoru vysokoenergetickych castic.

Simulation of Ion Irradiated Power Devices in ATLAS

Application of High Energy Ion Beams for Local Lifetime Control in Silicon

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    elektronická struktura a profily poruch diod ozářených alfa částicemi

Future Trends in Local Lifetime Control

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Nové principy ozařování výkonových součástek pro lokální řízení doby života

Impact of Defect Parameters on Power Device Modelling

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Simulace výkonových diod ozářených ionty helia a elektrony, vliv parametrů poruch

Lifetime Profiles of Ion Irradiated Devices

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Vliv ozařování ionty Helia na profily doby života ve výkonové diodě

Optimization of Power Diode Characteristics by Means of Ion Iradiation

2-D Simulation of Ion Irradiated Silicon Power Devices

Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices

Application of Defect Related Generation Current for Low-Dose Ion Implantation Monitoring

Defects Generated by Dispersive High Energy Ion Beam

Defects Generated by Electron and Alpha Irradiation in Silicon

Lifetime Control by Energy-Dispersed Ion Irradiation

Origin of Defect States at ZnS/Si Interfaces

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Sands, D., Reeve, D.
  • Publikace: Applied Physics A: Materials Science & Processing. 1995, A61(6), 637-641. ISSN 0947-8396.
  • Rok: 1995

Accurate Simulation of Combined Electron and Ion Irradiated Silicon Devices for Local Lifetime Tailoring

  • Pracoviště: Katedra mikroelektroniky
  • Anotace:
    Hydrogen, helium and electron irradiation of power diodes - measurements and simulation

Accurate Simulation of Fast Ion Irradiated Power Devices

Aplikace generačních proudů poruch pro monitorování nízkých dávek v iontové implantaci

Big Hopes for Application of Radiation Damages in Semiconductor Devices

Defects Generated by Dispersive High Energy Ion Beam

Development of Novel Techniques of Analog and Digital Integrated Circuit Design

  • Autoři: Adamčík, I., prof. Ing. Pavel Hazdra, CSc., Kejhar, M., Krischner, M., Koníř, L., Pleštil, A.
  • Publikace: CTU Seminar 94. Praha: České vysoké učení technické v Praze, 1994, pp. 205-206.
  • Rok: 1994

Electron and Ion Irradiation of Silicon Devices for Local Lifetime Tailoring

Application of Radiation Damages in Semiconductors - Detectors

  • Autoři: Sopko, B., Mácha, I., Procházka, I., Hamal, K., prof. Ing. Pavel Hazdra, CSc.,
  • Publikace: Workshop 93. Praha: České vysoké učení technické v Praze, 1993, pp. 99-100.
  • Rok: 1993

Application of Radiation Damages in Semiconductors - Processing

Modeling of Localized Lifetime Tailoring in Silicon Devices

Modelling of Localized Lifetime Tailoring in Silicon Devices

Point Defect Interactions in Ion Irradiated Silicon

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Svoboda, P.
  • Publikace: Europhysics Conference Abstracts. 17 A. Regensburg: European Physical Society and Deutsche Physikalische Gesellschaft, 1993. pp. 1312.
  • Rok: 1993

TCAD - A Progressive Tool for Engineers

Shallow junction formation by dual Ge/B, Sn/B and Pb/B implants

  • Autoři: Hašlar, V., Seidl, P., prof. Ing. Pavel Hazdra, CSc., Gwilliam, R., Sealy, B.
  • Publikace: Nuclear Instruments and Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms. 1991, B55 569-572. ISSN 0168-583X.
  • Rok: 1991

The influence of implantation temperature and subsequent annealing on residual damage in silicon

  • Autoři: prof. Ing. Pavel Hazdra, CSc., Hašlar, V., Bartoš, M.
  • Publikace: Nuclear Instruments and Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms. 1991, 55 637-641. ISSN 0168-583X.
  • Rok: 1991

Měření průběhu teploty při hydrataci anorganických pojiv

  • Autoři: Všetečka, T., prof. Ing. Pavel Hazdra, CSc., Všetečková, M.
  • Publikace: Ceramics - Silikáty. 1988, 32(13), 241-255. ISSN 0862-5468.
  • Rok: 1988

Radiateive Recombination Mechanism of Subnanometric InAs/GaAs Laser Structures

Za stránku zodpovídá: Ing. Mgr. Radovan Suk